3SK300 Hitachi Semiconductor, 3SK300 Datasheet

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3SK300

Manufacturer Part Number
3SK300
Description
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Low noise figure
NF = 1.0 dB typ. at f = 200 MHz
High gain
PG = 27.6 dB typ. at f = 200 MHz
MPAK-4
Silicon N Channel Dual Gate MOS FET
3
UHF / VHF RF Amplifier
2
3SK300
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-449
1st. Edition

Related parts for 3SK300

3SK300 Summary of contents

Page 1

... Silicon N Channel Dual Gate MOS FET Features Low noise figure NF = 1.0 dB typ 200 MHz High gain PG = 27.6 dB typ 200 MHz Outline MPAK-4 3 3SK300 UHF / VHF RF Amplifier Source 4 2. Gate1 3. Gate2 4. Drain ADE-208-449 1st. Edition ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature 2 Symbol Ratings G1S V 8 G2S Pch 150 Tch 150 Tstg –55 to +150 ...

Page 3

... Ciss 2.4 3.1 3.5 Coss 0.8 1.1 1.4 Crss — 0.021 0. 27.6 — NF — 1.0 1 15.6 — NF — 3.0 4.0 NF — 2.7 3.5 3SK300 Unit Test conditions 200 – G1S V = –3 V G2S G2S G1S G1S ...

Page 4

... Main Characteristics Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Ta ( Drain Current vs. Gate1 to Source Voltage 20 3.0 V 2 G2S Gate1 to source voltage 150 200 Drain Current vs. Gate2 to Source Voltage ...

Page 5

... D Power Gain vs. Drain Current 2 1 (V) G1S Power Gain vs. Drain to Source Voltage Drain to source voltage V 3SK300 G2S f = 200MHz Drain current I (mA G2S I = 10mA 200MHz ...

Page 6

... Noise Figure vs. Drain to Source Voltage Drain to source voltage V Noise Figure vs. Drain Current Drain current G2S I = 10mA 200MHz (V) DS Power Gain vs. Drain to Source Voltage ...

Page 7

... Drain to source voltage V Noise Figure vs. Drain to Source Voltage Noise Figure vs. Drain Current ( G2S I = 10mA 60MHz Drain to source voltage V (V) DS 3SK300 G2S f = 60MHz Drain current I (mA ...

Page 8

... Package Dimentions + 0.3 2.8 – 0.1 1.9 0.95 0.95 + 0.1 0.4 – 0. 0.1 0.4 – 0.05 0.95 0.85 1.8 8 0.16 + 0.1 0.4 – 0. 0.1 + 0.1 0.6 – 0.05 Unit 0.1 – 0.06 Hitachi Code MPAK–4 SC–61AA EIAJ JEDEC — ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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