3SK300 Hitachi Semiconductor, 3SK300 Datasheet - Page 5

• Manufacturer Part Number: 3SK300
• Description: Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

30
24
18
12
6
0
5
4
3
2
1
0
V
f = 1kHz
Forward Transfer Admittance vs.
Gate1 to source voltage V
DS
Noise Figure vs. Drain Current
0.4
= 6 V
Gate1 to Source Voltage
4
V
Drain current I
G2S
0.8
= 0.5 V
8
1 V
1.2
1.5 V
12
D
(mA)
V
V
f = 200MHz
2 V
DS
G2S
G1S
1.6
= 6 V
2.5 V
16
= 3V
3 V
(V)
2
20
50
40
50
40
30
20
10
30
20
10
0
0
Power Gain vs. Drain to Source Voltage
Power Gain vs. Drain Current
Drain to source voltage V
4
2
Drain current I
8
4
12
6
D
(mA)
V
V
f = 200MHz
V
I
f = 200MHz
D
DS
G2S
G2S
= 10mA
16
= 6 V
DS
3SK300
= 3V
8
= 3V
(V)
20
10
5