BF1215 Philips Semiconductors, BF1215 Datasheet - Page 9

• Manufacturer Part Number: BF1215
• Description: Dual N-channel dual gate MOSFET
• Manufacturer: Philips Semiconductors

NXP Semiconductors
BF1215_1
Product data sheet
Fig 11. Amplifier A drain current as a function of gain
Fig 13. Amplifier A forward transfer admittance and
(mA)
(mS)
|y
I
D
fs
10
40
30
20
10
|
10
0
1
2
10
0
V
T
reduction; typical values
V
I
phase as a function of frequency;
typical values
D(A)
j
DS(A)
DS(A)
= 25 °C; see
= 19 mA; T
= V
= 5 V; V
10
DS(B)
G2-S
= 5 V; V
Figure
j
= 25 °C.
20
= 4 V; V
10
32.
G1-S(B)
2
|y
ϕ
fs
30
fs
DS(B)
|
= 0 V; f = 50 MHz;
f (MHz)
= V
gain reduction (dB)
40
All information provided in this document is subject to legal disclaimers.
G1-S(B)
001aal557
001aal559
= 0 V;
10
50
3
Rev. 01 — 6 May 2010
−10
−10
−1
(deg)
ϕ
2
fs
Fig 12. Amplifier A input admittance as a function of
Fig 14. Amplifier A reverse transfer admittance and
g
(mS)
(mS)
is
|y
10
10
, b
rs
10
10
10
10
|
10
−1
−2
is
1
1
2
3
2
10
10
V
I
frequency; typical values
V
I
phase as a function of frequency;
typical values
D(A)
D(A)
DS(A)
DS(A)
= 19 mA; T
= 19 mA; T
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
j
j
= 25 °C.
= 25 °C.
= 4 V; V
= 4 V; V
10
10
2
2
|y
ϕ
b
g
rs
rs
is
is
DS(B)
DS(B)
|
f (MHz)
f (MHz)
= V
= V
© NXP B.V. 2010. All rights reserved.
www.DataSheet4U.com
G1-S(B)
G1-S(B)
001aal558
001aal560
BF1215
= 0 V;
= 0 V;
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ
3
rs
2
9 of 22