BF1215 Philips Semiconductors, BF1215 Datasheet - Page 5

• Manufacturer Part Number: BF1215
• Description: Dual N-channel dual gate MOSFET
• Manufacturer: Philips Semiconductors

NXP Semiconductors
8. Dynamic characteristics
Table 8.
Common source; T
[1]
[2]
BF1215_1
Product data sheet
Symbol Parameter
|y
C
C
C
C
G
NF
Xmod
fs
iss(G1)
iss(G2)
oss
rss
tr
|
Calculated from S-parameters.
Measured in
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance f = 100 MHz
transducer power gain
noise figure
cross modulation
Dynamic characteristics for amplifier A and B
Figure 32
amb
= 25
and
°
C; V
Figure 33
G2-S
= 4 V; V
test circuits.
Conditions
f = 100 MHz; T
f = 100 MHz
f = 100 MHz
f = 100 MHz
amplifier A: B
amplifier B: B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1 %; f
f
unw
All information provided in this document is subject to legal disclaimers.
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
= 60 MHz
DS
= 5 V; I
Rev. 01 — 6 May 2010
S
S
S
j
S
S
= B
= B
= 20 mS; B
D
= 25 °C
= Y
= Y
S
S
S
S
S
S
= 19 mA.
S(opt)
S(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
; B
; B
w
= 50 MHz;
L
L
S
= B
= B
= 0 S
L
L
L
L
L(opt)
L(opt)
= 0.5 mS
= 1 mS
= 0.5 mS
= 1 mS
L
L
= 1 mS
= 1 mS
Dual N-channel dual gate MOSFET
[1]
[1]
[1]
[1]
[1]
[1]
[2]
Min
23
-
-
-
-
30
26
22
30
26
22
-
-
-
95
-
-
105
Typ
27
2.5
2.5
0.8
27
34
30
26
34
31
26
-
1.5
1.9
100
104
107
104
© NXP B.V. 2010. All rights reserved.
www.DataSheet4U.com
BF1215
Max
38
-
-
-
-
38
34
30
38
34
30
6
-
-
-
-
-
-
Unit
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBμV
dBμV
dBμV
dBμV
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