BF1215 Philips Semiconductors, BF1215 Datasheet - Page 7

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BF1215

Manufacturer Part Number
BF1215
Description
Dual N-channel dual gate MOSFET
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF1215
Manufacturer:
NXP
Quantity:
25
NXP Semiconductors
BF1215_1
Product data sheet
Fig 5.
(mS)
|y
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
fs
30
|
20
10
0
0
V
Amplifier A forward transfer admittance as a
function of drain current; typical values
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 5 V; V
5
G1-S(B)
10
= V
(1)
(2)
DS(B)
15
(6)
= 0 V; T
20
All information provided in this document is subject to legal disclaimers.
001aal551
I
j
D
= 25 °C.
(mA)
(3)
(4)
(5)
25
Rev. 01 — 6 May 2010
Fig 6.
(mA)
I
D(A)
16
12
8
4
0
0
V
T
I
drain (
Amplifier A drain current as a function of
internal gate1 current; typical values
D(B)
j
DS(A)
= 25 °C.
= internal gate1 current = current on pin
amplifier
= 5 V; V
Dual N-channel dual gate MOSFET
20
G2-S
B) if MOSFET (B) is switched off.
= 4 V; V
DS(B)
40
= 5 V; V
I
D(B)
© NXP B.V. 2010. All rights reserved.
www.DataSheet4U.com
001aal552
BF1215
(μA)
G1-S(B)
60
= 0 V;
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