BF1205 Philips Semiconductors, BF1205 Datasheet - Page 3

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2003 Sep 30
Per MOS-FET; unless otherwise specified
V
I
P
C
C
NF
X
T
Per MOS-FET; unless otherwise specified
V
I
I
I
P
T
T
R
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
D
G1
G2
SYMBOL
SYMBOL
y
SYMBOL
j
stg
j
DS
tot
mod
DS
tot
ig1-ss
rss
th j-s
Dual N-channel dual gate MOS-FET
fs
s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
junction temperature
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
PARAMETER
T
T
soldering point of the source lead
I
amp. a: f = 1 MHz
amp. b: f = 1 MHz
f = 1 MHz
amp. a: f = 800 MHz
amp. b: f = 800 MHz
amp. a: input level for k = 1% at
40 dB AGC
amp. b: input level for k = 1% at
40 dB AGC
D
CAUTION
s
s
= 12 mA
102 C; note
102 C; temperature at the
3
CONDITIONS
CONDITIONS
VALUE
26
98
100
MIN. TYP. MAX. UNIT
240
65
MIN.
31
1.8
2.0
20
1.2
1.4
102
105
Product specification
10
30
200
+150
150
MAX.
10
10
BF1205
10
30
200
40
2.3
2.5
1.9
2.1
150
UNIT
K/W
V
mA
mA
mA
mW
V
mA
mW
mS
pF
pF
fF
dB
dB
dB V
dB V
UNIT
C
C
C