BF1205 Philips Semiconductors, BF1205 Datasheet - Page 17

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
V
R
Fig.26 Gate 1 current as a function of gate 2
DS
G1
( A)
I G1
(b) = 5 V; V
(b) = 150 k (connected to V
30
20
10
GG
GG
GG
0
0
= 5.0 V.
= 4.5 V.
= 4.0 V.
voltage; typical values; amplifier b.
DS
(a) = V
2
G1-S
(a) = 0 V; T
(4) V
(5) V
GG
); see Fig.4.
GG
GG
= 3.5 V.
= 3.0 V.
j
4
= 25 C;
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
MGX453
6
17
handbook, halfpage
Fig.27 Unwanted voltage for 1% cross-modulation
V
R
f
(dB V)
unw
V unw
DS
G1
= 60 MHz; T
(b) = 5 V; V
(b) = 150 k (connected to V
120
110
100
90
80
0
as a function of gain reduction; typical values;
amplifier b.
GG
amb
= 5 V; V
= 25 C; see Fig.30.
20
DS
(a) = V
GG
); f
G1-S
w
= 50 MHz;
(a) = 0 V;
40
gain reduction (dB)
Product specification
BF1205
MGX454
60