BF1205 Philips Semiconductors, BF1205 Datasheet - Page 16

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) R
(2) R
(3) R
(4) R
Fig.24 Drain current as a function of gate 1 (V
V
R
G2-S
G1
(mA)
I D
(b) = 150 k (connected to V
20
16
12
G1
G1
G1
G1
8
4
0
= 4 V; V
0
(b) = 68 k .
(b) = 82 k .
(b) = 100 k .
(b) = 120 k .
and drain supply voltage; typical values;
amplifier b.
DS
(a) = V
G1-S
2
(a) = 0 V; T
GG
(5) R
(6) R
(7) R
(8) R
); see Fig.4.
j
= 25 C;
G1
G1
G1
G1
4
V GG
(b) = 150 k .
(b) = 180 k .
(b) = 220 k .
(b) = 270 k .
V DS (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
MGX451
6
GG
)
16
handbook, halfpage
(1) V
(2) V
(3) V
V
R
Fig.25 Drain current as a function of gate 2
DS
G1
(mA)
I D
(b) = 5 V; V
(b) = 150 k (connected to V
16
12
8
4
0
GG
GG
GG
0
= 5.0 V.
= 4.5 V.
= 4.0 V.
voltage; typical values; amplifier b.
DS
(a) = V
2
G1-S
(a) = 0 V; T
(4) V
(5) V
GG
); see Fig.4.
GG
GG
= 3.5 V.
= 3.0 V.
j
4
= 25 C;
Product specification
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
BF1205
MGX452
6