MT28F128J3FS-12 ET Micron, MT28F128J3FS-12 ET Datasheet - Page 45
![no-image](/images/no-image-200.jpg)
MT28F128J3FS-12 ET
Manufacturer Part Number
MT28F128J3FS-12 ET
Description
128Mb Q-Flash - OBSOLETE
Manufacturer
Micron
Datasheet
1.MT28F128J3FS-12_ET.pdf
(55 pages)
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NOTE:
Table 26: Test Configuration Loading Value
Table 27: AC Characteristics–Read-Only Operations
Notes: 1, 2, 4; extended temperature (-40ºC ≤ T
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
TEST CONFIGURATION
PARAMETER
V
Read/Write Cycle Time
Address to Output Delay
CEx to Output Delay
OE# to Non-Array Output Delay
OE# to Array Output Delay
RP# High to Output Delay
CEx to Output in Low-Z
OE# to Output in Low-Z
CEx HIGH to Output in High-Z
OE# HIGH to Output in High-Z
Output Hold from Address,
CEx, or OE# Change, whichever occurs first
CEx LOW to BYTE# HIGH or LOW
BYTE# to Output Delay
BYTE# to Output in High-Z
CC
C
L
Q = V
includes jig capacitance.
CC
= 2.7V – 3.6V
Figure 18: Transient Equivalent Test Load Circuit
Under Test
A
Device
≤ +85ºC)
SYMBOL DENSITY
t
t
t
t
t
t
t
t
t
t
1.3V
RWH
45
AOA
ODO
t
AOE
OEO
ODC
t
ODB
OEC
ABY
t
ACE
t
AA
OH
RC
CB
R
1N914
L
C
= 3.3KΩ
L
C
128Mb
128Mb
128Mb
128Mb
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
32Mb
64Mb
32Mb
64Mb
32Mb
64Mb
32Mb
64Mb
30
(pF)
All
All
All
All
All
All
All
All
All
All
Out
V
V
CC
MIN
110
115
120
CC
0
0
0
Q = 2.7V–3.6V
128Mb, 64Mb, 32Mb
= 2.7V–3.6V
Q-FLASH MEMORY
MAX
1,000
1,000
110
115
120
110
115
120
150
180
210
50
25
35
15
10
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©2000 Micron Technology. Inc.
NOTES
3, 5
5
6
6
6
6
6
6
6
6
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