MT16VDDF12864HG-40B Micron, MT16VDDF12864HG-40B Datasheet

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MT16VDDF12864HG-40B

Manufacturer Part Number
MT16VDDF12864HG-40B
Description
DRAM Module, 128M x 64, 200-Pin DDR SDRAM SODIMM
Manufacturer
Micron
Datasheet
SMALL-OUTLINE
DDR SDRAM DIMM
Features
• 200-pin, small-outline, dual in-line memory
• Fast data transfer rates: PC3200
• Utilizes 400 MT/s DDR SDRAM components
• 512MB (64 Meg x 64), 1GB (128 Meg x 64)
• V
• 2.6V I/O (SSTL_2 compatible)
• V
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Table 1:
09005aef80b577fa
DDAF16C64_128x64HG_A.fm - Rev. A 5/03 EN
Refresh Count
Device Row Addressing
Device Bank Addressing
Device Configuration
Device Column Addressing
Module Rank Addressing
module (SODIMM)
aligned with data for WRITEs
architecture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
interval
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.6V
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
Address Table
1
NOTE:
MT16VDDF6464H – 512MB
MT16VDDF12864H – 1GB
For the latest data sheet, please refer to the Micron
site:
OPTIONS
• Package
• Frequency/CAS Latency2
512MB Module
1GB Module
Figure 1: 200-Pin SODIMM (MO-224)
200-pin SODIMM (Standard)
200-pin SODIMM (Lead-free)
5ns (200 MHz), 400 MT/s, CL = 3
www.micron.com/moduleds
4 (BA0, BA1)
8K (A0–A12)
2 (S0#, S1#)
1K (A0–A9)
32 Meg x 8
1. Contact Micron for availability of lead-free prod-
2. CL = CAS (READ) Latency.
512MB
ucts.
512MB, 1GB (x64) PC3200
8K
200-PIN DDR SODIMM
1
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
64 Meg x 8
©2003 Micron Technology, Inc.
1GB
8K
MARKING
-40B
G
Y
â
Web

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MT16VDDF12864HG-40B Summary of contents

Page 1

... Device Configuration Device Column Addressing Module Rank Addressing 09005aef80b577fa DDAF16C64_128x64HG_A.fm - Rev. A 5/03 EN PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For the latest data sheet, please refer to the Micron site: www ...

Page 2

... Table 2: Part Numbers and Timing Parameters PART NUMBER MODULE DENSITY MT16VDDF6464HG-40B__ MT16VDDF6464HY-40B__ MT16VDDF12864HG-40B__ MT16VDDF12864HY-40B__ NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current Revision codes. Example: MT16VDDF6464HG-40BA1. 09005aef80b577fa DDAF16C64_128x64HG_A.fm - Rev. A 5/03 EN ...

Page 3

... U7 U8 (all odd pins) PIN 199 U10 U11 U12 U14 U15 U16 (all even pins) PIN 2 pin SS Micron Technology, Inc., reserves the right to change products or specifications without notice. PIN SYMBOL 152 DQ46 154 DQ47 156 V DD 158 CK1# 160 CK1 162 ...

Page 4

... Data Strobe: Output with READ data, input with WRITE data. Output DQS is edge-aligned with READ data, centered in WRITE data. Used to capture data. 4 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM DESCRIPTION is applied and until DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. ...

Page 5

... Do Not Use: These pins are not connected on this module, but are assigned pins on other modules in this product family. 5 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. ...

Page 6

... U12, U13, U14, U16 120 CK1 CK1# V DDSPD REF V SS DDR SDRAMs: MT46V32M8S2FD DDR SDRAMs: MT46V64M8S2FD www.micron.com/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM DM CS# DQS DM CS# DQS ...

Page 7

... CK1# U9, U10, U11, U15 V DDSPD REF V SS DDR SDRAMs: MT46V32M8S2FD DDR SDRAMs: MT46V64M8S2FD www.micron.com/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM DM CS# DQS DM CS# DQS ...

Page 8

... Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequential or inter- leaved), A4–A6 specify the CAS latency, and A7–A12 specify the operating mode. Micron Technology, Inc., reserves the right to change products or specifications without notice bus ©2003 Micron Technology, Inc. ...

Page 9

... M12 M11 M10 Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus Mode Register (Mx) Burst Length Burst Length Reserved ...

Page 10

... Test modes and reserved states should not be used because unknown operation or incompatibility with future ver- sions may result. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM ...

Page 11

... NOTE: 1. BA1 and BA0 (E14 and E13) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). 2. The QFC# option is not supported. Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus 4 1 ...

Page 12

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 ADDR NOTES Bank/Row 2 Bank/Col 3 Bank/Col Code Op-Code 8 DM DQS L Valid H X ©2003 Micron Technology, Inc. ...

Page 13

... +2.6V ±0.1V DD MIN MAX UNITS + 0.310 – V – 0.310 V REF 0.49 ´ Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES V 32 32, 36 µA 47 µ 33 NOTES 12, 25, 35 ...

Page 14

... DD4W 4,160 DD5 DD5A DD6 a I 3,792 DD7 2p (CKE LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice +2.6V ±0.1V NOTES 21, 28 21 20, 44 ...

Page 15

... CK I 1,560 DD4W 5,520 DD5 I 176 DD5A I 80 DD6 I 3,640 DD7 2p (CKE LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice +2.6V ±0.1V NOTES 21, 28 21 20, 44 ...

Page 16

... 2.2 IPW t 2.2 MRD QHS t QHS 15 t RAP Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 MIN MAX UNITS UNITS NOTES MAX +0. 40, 46 ...

Page 17

... WPST WTR DQSQ 70.3 t REFC t 7.8 REFI t 0 VTD t 70 XSNR t 200 XSRD Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 UNITS NOTES 18 µ ...

Page 18

... that meets the minimum measurements is the largest multi that meets the maximum absolute t RAS. Micron Technology, Inc., reserves the right to change products or specifications without notice. (peak to peak) = stabi- REF REF t LZ). (DC) MIN prior t RAS ©2003 Micron Technology, Inc. ...

Page 19

... V IL pulse width can not be greater than 1/3 of the cycle rate. 36 Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM level and the referenced test load overshoot: V (MAX ...

Page 20

... When an input signal is HIGH or LOW defined as a steady state logic HIGH or LOW. 20 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM 0.5 1.0 1 (V) DD OUT REF later. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2.0 2.5 ©2003 Micron Technology, Inc. ...

Page 21

... Figure 11: Definition of Start and Stop SCL SDA DATA STABLE 21 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM START BIT 8 Acknowledge Micron Technology, Inc., reserves the right to change products or specifications without notice. STOP BIT 9 ©2003 Micron Technology, Inc. ...

Page 22

... PC3200 200-PIN DDR SODIMM CHIP ENABLE SA2 SA1 SA0 1 0 SA2 SA1 SA0 t SU:DAT t SU:STO Micron Technology, Inc., reserves the right to change products or specifications without notice BUF UNDEFINED ©2003 Micron Technology, Inc. ...

Page 23

... LOW 1 0.3 f SCL 400 KHz t SU:DAT 100 t SU:STA 0.6 t SU:STO 0.6 t WRC 10 ms Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS V + 0.5 V ´ 0 µA µA µA mA NOTES µs 1 µ µs µs µs ns µs µ µ ...

Page 24

... Micron Technology, Inc., reserves the right to change products or specifications without notice ...

Page 25

... DQSQ 0.5ns (-40B) Release 1.1 -40B MICRON (Continued) 01–11 1-9 0 Variable Data Variable Data Variable Data – Micron Technology, Inc., reserves the right to change products or specifications without notice. 25 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM MT16VDDF6464H MT16VDDF12864H 01– ...

Page 26

... U13 U16 MAX or typical where noted. MIN 26 512MB, 1GB (x64) PC3200 200-PIN DDR SODIMM U6 1.255 (31.88) 1.245 (31.62) 0.787 (20.00) TYP PIN 199 U14 PIN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. 0.150 (3.80) MAX 0.043 (1.10) 0.035 (0.90) ©2003 Micron Technology, Inc. ...

Page 27

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. All other trademarks are the property of their respective owners. ...

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