MT16VDDF12864HG-26AA1 Micron, MT16VDDF12864HG-26AA1 Datasheet - Page 29
![no-image](/images/no-image-200.jpg)
MT16VDDF12864HG-26AA1
Manufacturer Part Number
MT16VDDF12864HG-26AA1
Description
DRAM Module, 128Mx64, DRAM Module, 1GB, 200-PIN DDR SODIMM Module
Manufacturer
Micron
Datasheet
1.MT16VDDF12864HG-26AA1.pdf
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Table 21: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 29
NOTE:
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
1. Device latencies used for SPD values.
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
99-127 Manufacturer-Specific Data (RSVD)
BYTE
95-98
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
94
Week of Manufacture in BCD
Module Serial Number
t
RAS used for -262/-26A/-265 modules is calculated from
DESCRIPTION
29
ENTRY (VERSION)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RC -
t
RP. Actual device spec value is 40 ns.
200-PIN DDR SODIMM
MT16VDDF6464H MT16VDDF12864H
Variable Data
Variable Data
512MB, 1GB (x64)
–
©2003 Micron Technology, Inc.
Variable Data
Variable Data
–
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