MT16VDDF12864HG-26AA1 Micron, MT16VDDF12864HG-26AA1 Datasheet

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MT16VDDF12864HG-26AA1

Manufacturer Part Number
MT16VDDF12864HG-26AA1
Description
DRAM Module, 128Mx64, DRAM Module, 1GB, 200-PIN DDR SODIMM Module
Manufacturer
Micron
Datasheet
SMALL-OUTLINE
DDR SDRAM DIMM
Features
• 200-pin, small-outline, dual in-line memory
• Fast data transfer rates: PC1600, PC2100, and PC2700
• Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR
• 512MB (64 Meg x 64), 1GB (128 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Table 1:
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
Refresh Count
Device Row Addressing
Device Bank Addressing
Device Configuration
Device Column Addressing
Module Rank Addressing
module (SODIMM)
SDRAM components
aligned with data for WRITEs
architecture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
Address Table
1
NOTE:
MT16VDDF6464H – 512MB
MT16VDDF12864H – 1GB
For the latest data sheet, please refer to the Micron
site:
OPTIONS
• Package
• Frequency/CAS Latency
Figure 1: 200-Pin SODIMM (MO-224)
200-pin SODIMM (standard)
200-pin SODIMM (lead-free)
167 MHz (333 MT/s) CL = 2.5
133 MHz (266 MT/s) CL = 2
133 MHz (266 MT/s) CL = 2
133 MHz (266 MT/s) CL = 2.5
100 MHz (200 MT/s) CL = 2
512MB Module
1GB Module
www.micron.com/moduleds
4 (BA0, BA1)
8K (A0–A12)
2 (S0#, S1#)
1K (A0–A9)
32 Meg x 8
1. Contact factory for availability of lead-free prod-
2. CL = CAS (READ) latency.
512MB
ucts.
8K
200-PIN DDR SODIMM
512MB, 1GB (x64)
2
1
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
64 Meg x 8
©2003 Micron Technology, Inc.
1GB
8K
MARKING
-335
-262
-26A
-265
-202
G
Y
â
Web

Related parts for MT16VDDF12864HG-26AA1

MT16VDDF12864HG-26AA1 Summary of contents

Page 1

... Device Configuration Device Column Addressing Module Rank Addressing 09005aef80a646bc DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 512MB, 1GB (x64) 200-PIN DDR SODIMM MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For the latest data sheet, please refer to the Micron site: www ...

Page 2

... MT16VDDF6464HY-202__ MT16VDDF12864HG-335__ MT16VDDF12864HY-335__ MT16VDDF12864HG-262__ MT16VDDF12864HY-262__ MT16VDDF12864HG-26A__ MT16VDDF12864HY-26A__ MT16VDDF12864HG-265__ MT16VDDF12864HY-265__ MT16VDDF12864HG-202__ MT16VDDF12864HY-202__ NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current Revision codes. Example: MT16VDDF6464HG-265A1. 09005aef80a646bc DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN CONFIGURATION TRANSFER 512MB ...

Page 3

... U7 U8 (all odd pins) PIN 199 U10 U11 U12 U14 U15 U16 (all even pins) PIN 2 pin SS Micron Technology, Inc., reserves the right to change products or specifications without notice. PIN SYMBOL 152 DQ46 154 DQ47 156 V DD 158 CK1# 160 CK1 162 ...

Page 4

... Input Data Write Mask. DM LOW allows WRITE operation. DM HIGH blocks WRITE operation. DM lines do not affect READ operation. 4 512MB, 1GB (x64) 200-PIN DDR SODIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. ...

Page 5

... Do Not Use: These pins are not connected on this module, but are assigned pins on other modules in this product family. 5 512MB, 1GB (x64) 200-PIN DDR SODIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. ...

Page 6

... CK0# U12, U13, U14, U16 120 CK1 DDR SDRAMs U4, U5, U6, U8 CK1# U9, U10, U11, U15 CK2 120Ω CK2# SPD/EEPROM DDR SDRAMs DDR SDRAMs DDR SDRAMs Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. ...

Page 7

... U4, U5, U6, U8 CK1# U9, U10, U11, U15 V DDSPD REF V SS DDR SDRAMs: MT46V32M8S2FD DDR SDRAMs: MT46V64M8S2FD www.micron.com/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 512MB, 1GB (x64) 200-PIN DDR SODIMM DM CS# DQS DM CS# DQS ...

Page 8

... Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequential or inter- leaved), A4–A6 specify the CAS latency, and A7–A12 specify the operating mode. Micron Technology, Inc., reserves the right to change products or specifications without notice bus ©2003 Micron Technology, Inc. ...

Page 9

... M12 M11 M10 Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus Mode Register (Mx) Burst Length Burst Length Reserved ...

Page 10

... Definition Diagram, on page 11. The extended mode 75 £ f £ 125 register is programmed via the LOAD MODE REGIS- TER command to the mode register (with BA0 = 1 and Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 512MB, 1GB (x64) 200-PIN DDR SODIMM ...

Page 11

... NOTE: 1. BA1 and BA0 (E14 and E13) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). 2. The QFC# option is not supported. Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus 4 3 ...

Page 12

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 ADDR NOTES Bank/Row 2 Bank/Col 3 Bank/Col Code Op-Code 8 DM DQS L Valid H X ©2003 Micron Technology, Inc. ...

Page 13

... +2.5V ±0.2V DD UNIT MIN MAX S + 0.310 – V – 0.310 V REF 0.49 ´ Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES V 32 32, 36 µA 47 µ 33 NOTES 12, 25, 35 ...

Page 14

... LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice +2.5V ±0.2V DD UNIT NOTE 20 20 21, 28 21, 28 ...

Page 15

... LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice +2.5V ±0.2V DD UNIT NOTE 20 20 21, 28 21, 28, 44 ...

Page 16

... IPW t 12 MRD QHS t 0.75 QHS t 42 70,000 RAS 18 t RAP Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 512MB, 1GB (x64) 200-PIN DDR SODIMM MIN MAX UNITS +2.5V ±0.2V -262 MIN ...

Page 17

... WTR DQSQ 70.3 REFC 7.8 t REFI VTD XSNR t 200 200 XSRD Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 MAX UNITS NOTES 1 0 18 ...

Page 18

... QHS t 0.75 QHS 40 120,000 t RAS t 20 RAP RFC t 20 RCD Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 512MB, 1GB (x64) 200-PIN DDR SODIMM = +2.5V ±0.2V DD -265 -202 MAX MIN MAX UNITS NOTES +0.75 -0.8 +0.8 ns 0.55 0.45 0. 0.55 0.45 0. ...

Page 19

... WTR DQSQ QH - DQSQ t 70.3 70.3 REFC 7.8 7.8 t REFI VTD XSNR t 200 200 XSRD Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 512MB, 1GB (x64) -202 UNITS NOTES 0.9 1 0 18, 19 0.4 0 ...

Page 20

... IH t DQSS RFC) for I measurements is the that meets the minimum measurements is the largest multi- DD Micron Technology, Inc., reserves the right to change products or specifications without notice has remains stabi- REF REF t DQSH t RAS ©2003 Micron Technology, Inc. ...

Page 21

... Clock Duty Cycle Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 512MB, 1GB (x64) 200-PIN DDR SODIMM AC level through to the target AC level (AC). IH maintain at least the target DC level (DC). IH ...

Page 22

... The current Micron part operates below the slow- est JEDEC operating frequency of 83 MHz. As such, future die may not reflect this option. Figure 10: Pull-Up Characteristics Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 512MB, 1GB (x64) (MAX 1.5V for a ...

Page 23

... When an input signal is HIGH or LOW defined as a steady state logic HIGH or LOW. Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 512MB, 1GB (x64) 200-PIN DDR SODIMM ...

Page 24

... Figure 12: Definition of Start and Stop SCL SDA DATA STABLE Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 512MB, 1GB (x64) 200-PIN DDR SODIMM START BIT ...

Page 25

... DH 25 512MB, 1GB (x64) 200-PIN DDR SODIMM CHIP ENABLE SA2 SA1 SA0 1 0 SA2 SA1 SA0 t SU:DAT t SU:STO Micron Technology, Inc., reserves the right to change products or specifications without notice BUF UNDEFINED ©2003 Micron Technology, Inc. ...

Page 26

... LOW 1 0.3 f SCL 400 KHz t SU:DAT 100 t SU:STA 0.6 t SU:STO 0.6 t WRC 10 ms Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS V + 0.5 V ´ 0 µA µA µA mA NOTES µs 1 µ µs µs µs ns µs µ µ ...

Page 27

... RRD (-262/-26A/-265/-202) 18ns (-335) t RCD) 15ns (-262) 20ns (-26A/-265/-202) Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 512MB, 1GB (x64) 200-PIN DDR SODIMM MT16VDDF6464H MT16VDDF12864H ...

Page 28

... Release 1.0 -335 -262 -26A -265 -202 MICRON 01–12 1-9 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 512MB, 1GB (x64) 200-PIN DDR SODIMM MT16VDDF6464H MT16VDDF12864H ...

Page 29

... DDR SODIMM ENTRY (VERSION) MT16VDDF6464H MT16VDDF12864H Variable Data Variable Data – RP. Actual device spec value is 40 ns. Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 Variable Data Variable Data – ©2003 Micron Technology, Inc. ...

Page 30

... U12 U13 U16 MAX or typical where noted. MIN 30 512MB, 1GB (x64) 200-PIN DDR SODIMM U6 1.255 (31.88) 1.245 (31.62) 0.787 (20.00) TYP PIN 199 U14 PIN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. 0.150 (3.80) MAX 0.043 (1.10) 0.035 (0.90) ©2003 Micron Technology, Inc. ...

Page 31

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. All other trademarks are the property of their respective owners. ...

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