STU8NA80 STMicroelectronics, STU8NA80 Datasheet - Page 3

• Manufacturer Part Number: STU8NA80
• Description: N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symbol
(di/dt)
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 4.7
= 47
= 4.7
= 8 A
= 8.3 A
= 400 V
= 640 V
= 640 V
= 400 V I
= 100 V
Test Conditions
Test Conditions
Test Conditions
D
= 8 A
di/dt = 100 A/ s
T
V
j
V
V
GS
V
= 150
GS
I
GS
GS
I
D
I
D
= 10 V
D
V
= 8 A
= 10 V
= 4 A
= 8 A
= 10 V
= 10 V
GS
o
C
= 0
Min.
Min.
Min.
Typ.
Typ.
Typ.
13.4
120
115
765
37
45
15
55
45
15
70
35
Max.
Max.
Max.
33.2
150
8.3
1.6
50
60
60
20
91
STU8NA80
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/5