STU8NA80 STMicroelectronics, STU8NA80 Datasheet
STU8NA80
Available stocks
Related parts for STU8NA80
STU8NA80 Summary of contents
Page 1
... March 1996 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR R I DSS DS(on) D < 1.0 8 0.85 Parameter = 100 STU8NA80 PRELIMINARY DATA Max220 INTERNAL SCHEMATIC DIAGRAM Value 800 800 30 8.3 5.3 33.2 160 1.28 -65 to 150 150 Unit ...
Page 2
... STU8NA80 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR www.DataSheet4U.com (pulse width limited Single Pulse Avalanche Energy AS (starting T E Repetitive Avalanche Energy ...
Page 3
... 4 Test Conditions di/dt = 100 100 150 STU8NA80 Min. Typ. Max. Unit 120 A/ s 115 150 Min. Typ. Max. Unit ...
Page 4
... STU8NA80 DIM. A www.DataSheet4U.com 4/5 Max220 MECHANICAL DATA mm MIN. TYP. MAX. 4.3 4.6 2.2 2.4 2.9 3.1 0.7 0.93 1.25 1.4 1.2 1.38 0.45 0.6 15.9 16.3 9 9.35 0.8 1.2 2.8 3.2 2.44 2.64 10.05 10.35 13.2 13 inch MIN. TYP. MAX. 0.169 0.181 0.087 0.094 0.114 0.122 0.027 0.036 0.049 0.055 0.047 0.054 0.18 0.023 0.626 0.641 0.354 0.368 0.031 ...
Page 5
... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES . . . STU8NA80 5/5 ...