TN28F010-150 Intel Corporation, TN28F010-150 Datasheet - Page 14

• Manufacturer Part Number: TN28F010-150
• Description: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
• Manufacturer: Intel Corporation

28F010
NOTES:
1.
2.
3.
4.
14
See DC Characteristics for the value of V
Program Verify is only performed after byte programming. A final read/compare may be performed (optional) after the
register is written with the Read command.
Refer to Principles of Operation .
CAUTION: The algorithm must be followed to ensure proper and reliable operation of the device.
Increment
Address
N
Write Read Cmd
Programming
Time Out 10 µs
Write Program
Write Program
Time Out 6 µs
Program Cmd
Programming
Figure 4. 28F010 Quick-Pulse Programming Algorithm
Apply V
Write Set-Up
Apply V
PLSCNT = 0
from Device
Verify Cmd
Read Data
Completed
Cmd (A/D)
Address?
Verify
Start
Data
Last
PPH
PPL
Y
Y
(1)
(1)
(4)
PPH
N
and V
Apply V
PPL
PLSCNT
Program
=25?
Error
.
Inc
PPL
N
Y
(1)
Operation
Stand-by
Standby
Standby
Standby
Standby
Write
Write
Write
Read
Write
Bus
Command
Program
Program
Program
Verify
Set-Up
Read
(2)
Wait for V
V
Initialize Pulse-Count
Data = 40H
Valid Address/Data
Duration of Program
Operation (t
Data = C0H; Stops
Program Operations
t
Read Byte to Verify
Programming
Compare Data Output to
Data Expected
Data = 00H, Resets the
Register for Read
Operations
Wait for V
WHGL
PPH
(1)
Comments
PP
PP
WHWH1
Ramp to
Ramp to V
)
(3)
PPL
0207_04
(1)