STW8NA80 STMicroelectronics, STW8NA80 Datasheet - Page 3

• Manufacturer Part Number: STW8NA80
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
• Manufacturer: STMicroelectronics

www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symbo l
(di/dt)
Symbo l
Symbo l
I
V
t
SDM
t
r (Voff)
SD
I
Q
Q
d(on)
RRM
I
Q
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
R
V
V
R
I
I
V
SD
SD
DD
G
DD
G
DD
DD
G
DD
= 4.7
= 47
= 4.7
= 7.5 A
= 7.2 A
= 400 V
= 640 V
= 640 V
= 400 V I
= 100 V
Test Con ditions
Test Con ditions
Test Con ditions
D
= 8 A V
di/dt = 100 A/ s
T
j
V
V
GS
V
= 150
GS
I
GS
GS
I
D
I
D
D
= 10 V
V
= 8 A
= 10 V
= 4 A
= 10 V
= 8 A
= 10 V
GS
o
C
= 0
Min.
Min.
Min.
STW8NA80 STH8NA80FI
Typ.
Typ.
Typ.
170
850
20
28
75
10
35
18
20
25
17
40
Max.
Max.
Max.
28.8
100
7.2
1.6
28
38
25
28
35
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/6