STW8NA80 STMicroelectronics, STW8NA80 Datasheet

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STW8NA80

Manufacturer Part Number
STW8NA80
Description
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Manufacturer
STMicroelectronics
Datasheet

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STW8NA80
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Part Number:
STW8NA80
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DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled rug-
gedness and superior switching performance.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
October 1998
STW 8NA80
STH8NA80F I
Symb ol
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
V
DM
V
V
V
T
P
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
s tg
DS
GS
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
G ate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
T otal Dissipation at T
Derating Factor
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junct ion T emperature
DS(on)
800 V
800 V
V
= 1.3
DSS
< 1.50
< 1.50
R
DS(on)
c
Parameter
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
7.2 A
4.5 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
TO-247
STW 8NA80
28.8
175
7.2
4.5
1.4
1
2
3
-65 to 150
STH8NA80FI
Valu e
800
800
150
30
STW8NA80
ISOWATT218
ST H8NA80FI
PRELIMINARY DATA
4000
28.8
0.56
4.5
2.8
70
1
W/
Unit
o
o
W
2
V
V
V
A
A
A
V
C
C
o
C
3
1/6

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STW8NA80 Summary of contents

Page 1

... N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS R I DSS DS(on) D < 1.50 7.2 A < 1. Parameter = 100 STW8NA80 STH8NA80FI PRELIMINARY DATA TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Valu e STW 8NA80 ST H8NA80FI 800 800 30 7.2 4.5 4.5 2.8 28.8 28.8 175 70 1.4 0.56 4000 -65 to 150 150 ...

Page 2

... STW8NA80 STH8NA80FI THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l www.DataSheet4U.com I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting T ...

Page 3

... 4 Test Con ditions 7.5 A di/dt = 100 100 150 STW8NA80 STH8NA80FI Min. Typ. Max. Unit 170 100 Min. Typ. Max. Unit ...

Page 4

... STW8NA80 STH8NA80FI DIM www.DataSheet4U.com Dia 4/6 TO-247 MECHANICAL DATA mm MIN. TYP. MAX. 4.7 5.3 2.2 2.6 0.4 0.8 1 1.4 2 2.4 3 3.4 10.9 15.3 15.9 19.7 20.3 14.2 14.8 34.6 5 3.55 3.65 inch MIN. TYP. MAX. 0.185 0.209 0.087 0.102 0.016 0.031 0.039 0.055 0.079 0.094 0.118 0.134 0.429 0.602 0.626 0.776 0.779 0.559 ...

Page 5

... STW8NA80 STH8NA80FI inch MIN. TYP. MAX. 0.210 0.222 0.130 0.149 0.114 0.122 0.074 0.081 0.029 0.039 0.041 0.049 0.425 0.441 0.622 0.637 0.818 0.834 0.752 0.783 0.897 0.929 1.594 1.673 0.190 0.206 0.797 0.817 0.137 0.145 0.082 ...

Page 6

... STW8NA80 STH8NA80FI www.DataSheet4U.com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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