SIE810DF Vishay Siliconix, SIE810DF Datasheet - Page 2

• Manufacturer Part Number: SIE810DF
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

SPICE Device Model SiE810DF
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
g
SD
oss
rss
iss
fs
gs
gd
g
V
V
V
DS
DS
DS
= 10 V, V
= 10 V, V
= 10V, V
V
V
V
V
V
Test Condition
DS
DS
GS
GS
DS
= V
≤ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, I
I
S
GS
GS
GS
GS
= 10 A
, I
= 10 V, I
= 4.5 V, I
= 0 V, f = 1 MHz
D
GS
= 250 µA
D
D
D
= 25 A
= 4.5 V
= 25 A
= 25 A
D
D
= 20 A
= 20 A
Simulated
0.0013
13430
Data
0.0021
1490
1774
0.84
1.1
202
803
190
91
21
19
Measured
0.0013
0.0022
Data
13000
S-60992Rev. A, 12-Jun-06
1600
1000
0.90
163
200
19
90
21
Document Number: 74188
Unit
nC
pF
Ω
V
A
S
V