SIE810DF Vishay Siliconix, SIE810DF Datasheet
SIE810DF
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SIE810DF Summary of contents
Page 1
... Document Number: 74188 S-60992Rev. A, 12-Jun-06 SPICE Device Model SiE810DF • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...
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... SPICE Device Model SiE810DF Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes a. Pulse test ...
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... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 74188 S-60992Rev. A, 12-Jun-06 SPICE Device Model SiE810DF Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...