HAT2029 Hitachi Semiconductor, HAT2029 Datasheet - Page 5

• Manufacturer Part Number: HAT2029
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

500
200
100
50
20
10
50
40
30
20
10
5
0.1
0
V
I
di/dt = 20 A/µs
V
DS
Reverse Drain Current
D
GS
0.2
Dynamic Input Characteristics
= 7.5 A
Body–Drain Diode Reverse
4
= 0, Ta = 25°C
Gate Charge
V
DD
Recovery Time
0.5
= 20 V
V
8
10 V
DD
5 V
1
= 5 V
10 V
20 V
12
Qg (nc)
2
I
DR
V
16
GS
5
(A)
20
10
0
10
8
6
4
2
10000
3000
1000
100
500
200
100
300
30
10
50
20
10
5
0.1
0
Drain to Source Voltage V
0.2
10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
t
d(off)
t f
V
PW = 3 µs, duty < 1 %
0.5
GS
20
t
d(on)
Coss
= 4 V, V
Ciss
r t
Crss
1
30
I
2
DD
D
V
f = 1 MHz
HAT2029R
GS
(A)
= 10 V
40
DS
= 0
5
(V)
50
10
5