HAT2029 Hitachi Semiconductor, HAT2029 Datasheet - Page 3

• Manufacturer Part Number: HAT2029
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
4.0
3.0
2.0
1.0
50
40
30
20
10
0
0
10 V 6 V
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Pulse Test
Ambient Temperature
Typical Output Characteristics
2
50
5 V
4 V
4
100
V
6
GS
= 1.5 V
150
V
Ta (°C)
2.5 V
3.5 V
DS
2 V
8
3 V
(V)
200
10
0.03
0.01
100
0.3
0.1
30
10
50
40
30
20
10
3
1
0.1
0
Ta = 25 °C
1 shot Pulse
1 Drive Operation
Note 5 :
Drain to Source Voltage
Operation in
this area is
limited by R
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
1
Tc = –25 °C
1
DS(on)
25 °C
75 °C
2
3
3
10
V
Pulse Test
DS
V
V
HAT2029R
GS
DS
= 10 V
4
30
100 µs
10 µs
(V)
(V)
100
5
3