HAT2029 Hitachi Semiconductor, HAT2029 Datasheet - Page 4

• Manufacturer Part Number: HAT2029
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT2029R
4
0.10
0.08
0.06
0.04
0.02
0.5
0.4
0.3
0.2
0.1
–40
0
0
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
V
Gate to Source Voltage
Pulse Test
GS
4 V
Case Temperature
2
0
= 2.5 V
Gate to Source Voltage
vs. Temperature
40
4
I
D
= 5 A
80
I
6
1 A, 2 A, 5 A
D
= 5 A
Tc
Pulse Test
2 A
1 A
2 A 1 A
V
120
8
GS
(°C)
(V)
160
10
0.005
0.002
0.05
0.02
0.01
0.1
0.2
0.5
50
20
10
5
2
1
Static Drain to Source on State Resistance
0.2
0.2
Pulse Test
Forward Transfer Admittance vs.
0.5
0.5
Drain Current
Drain Current I
Tc = –25 °C
vs. Drain Current
1
1
Drain Current
25 °C
V
2
2
GS
75 °C
= 2.5 V
I
V
Pulse Test
D
D
5
5
DS
4 V
(A)
(A)
= 10 V
10
10
20
20