BUK454-800A Philips Semiconductors, BUK454-800A Datasheet - Page 3

• Manufacturer Part Number: BUK454-800A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1993
PowerMOS transistor
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
100
120
110
100
0.1
120
110
100
10
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
1
Fig.3. Safe operating area. T
0
0
Fig.1. Normalised power dissipation.
10
0
0
ID / A
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
); I
40
40
100
= f(T
DM
DC
single pulse; parameter t
60
60
mb
D
Tmb / C
VDS / V
Tmb / C
/P
A
B
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
1000
100
= f(T
100
100 ms
100 us
1 ms
10 ms
tp = 10 us
BUK454-800A,B
mb
mb
120
120
= 25 ˚C
)
GS
140
140
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.01
0.1
10
20
15
10
4
3
2
1
0
1
5
0
1E-07
0
ID / A
0
Zth / (K/W)
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
D =
0.05
0.02
0.5
0.2
0.1
Z
0
R
th j-mb
4
4
I
DS(ON)
D
1E-05
= f(V
= f(t); parameter D = t
4.2
1
8
= f(I
DS
4.4
12
); parameter V
D
); parameter V
VDS / V
1E-03
ID / A
t / s
4.6
2
16
P
D
BUK454-800A/B
VGS / V =
Product Specification
4.8
20
t
p
T
1E-01
GS
BUK454-800A
3
BUK454-800A
D =
5
24
GS
p
BUKx54-hv
/T
j
T
j
t
6
= 25 ˚C .
p
t
4.8
4.6
4.4
4.2
4
= 25 ˚C .
10
5
6
28
Rev 1.100
10
1E+01
4