BUK454-60H Philips Semiconductors, BUK454-60H Datasheet

BUK454-60H

Manufacturer Part Number

BUK454-60H

Description

PowerMOS transistor

Manufacturer

Philips Semiconductors

Datasheet

1.BUK454-60H.pdf (7 pages)

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Philips Semiconductors

GENERAL DESCRIPTION

N-channel enhancement mode

field-effect power transistor in a

plastic envelope.

The device is intended for use in

automotive applications, Switched

Mode Power Supplies (SMPS),

motor control, welding, DC/DC and

AC/DC converters, and in general

purpose switching applications.

PINNING - TO220AB

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCES

August 1996

PowerMOS transistor

SYMBOL

SYMBOL PARAMETER

stg

DGR

tot

tab

th j-mb

th j-a

gate

drain

source

drain

Thermal resistance junction to

mounting base

Thermal resistance junction to

ambient

PARAMETER

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction temperature

DESCRIPTION

QUICK REFERENCE DATA

PIN CONFIGURATION

SYMBOL

tot

DS(ON)

CONDITIONS

= 25 ˚C

= 100 ˚C

= 25 ˚C

= 20 k

tab

PARAMETER

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

1 2 3

SYMBOL

TYP.

MIN.

- 55

Product specification

MAX.

125

175

164

125

175

BUK454-60H

1.2

Rev 1.000

UNIT

K/W

˚C

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