BUK454-200A Philips Semiconductors, BUK454-200A Datasheet

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BUK454-200A

Manufacturer Part Number
BUK454-200A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK454-200A
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BUK454-200A/B
Manufacturer:
NXP
Quantity:
12 500
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a plastic
envelope suitable for use in surface
mount applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
general purpose switching
applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
February 1996
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
DS
DGR
tot
stg
j
tab
th j-mb
th j-a
1
2
3
GS
gate
drain
source
drain
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
CONDITIONS
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
-
mb
mb
mb
mb
GS
tab
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MIN.
- 55
-
-
-
-
-
-
-
-
SYMBOL
-200A
MIN.
9.2
6.5
36
-
-
MAX.
g
200
200
175
175
BUK454-200A/B
30
90
Product Specification
TYP.
60
-
-200B
MAX.
8.2
5.8
33
200
175
9.2
0.4
90
d
s
MAX.
1.67
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
UNIT
˚C
V
V
V
A
A
A
W
V
A
K/W
K/W

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BUK454-200A Summary of contents

Page 1

... R Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK454-200A/B MAX. UNIT 200 9 175 ˚C 0.4 SYMBOL MAX. UNIT - 200 V - 200 -200A -200B - 9.2 8 6.5 5 ...

Page 2

... CONDITIONS - - 9.2 A; -dI /dt = 100 100 CONDITIONS 100 Product Specification BUK454-200A/B MIN. TYP. MAX. UNIT 200 - - V 2.1 3.0 4 0.1 1 100 nA - 0.35 0.4 - 0.4 0.5 MIN. TYP. ...

Page 3

... T 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j- BUK444-200A VGS / VDS / f(V ); parameter BUK454-200A RDS(ON) / Ohm VGS / V = 5.5 4 6 ˚ f(I ); parameter V DS(ON 1E+ ...

Page 4

... 10000 1000 100 100 140 180 Fig.12. Typical capacitances f Product Specification BUK454-200A/B VGS(TO max. typ. min. - 100 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION 2 % typ ...

Page 5

... Fig.15. Normalised avalanche energy rating. DS BUK454-200A VGS 0 2 Fig.16. Avalanche energy test circuit Product Specification BUK454-200A/B WDSS 100 120 140 160 Tmb / f(T ); conditions DSS VDS - T.U. RGS shunt ...

Page 6

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1996 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.17. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK454-200A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Product Specification BUK454-200A/B Rev 1.000 ...

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