BUK454-200A Philips Semiconductors, BUK454-200A Datasheet - Page 3

• Manufacturer Part Number: BUK454-200A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
February 1996
PowerMOS transistor
ID% = 100 I
I
120
110
100
Fig.2. Normalised continuous drain current.
D
120
110
100
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
0.1
10
0
& I
0
Fig.3. Safe operating area. T
1
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
1
DM
ID / A
= f(V
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
DS
10
); I
60
60
= f(T
DM
DC
single pulse; parameter t
80
80
Tmb / C
Tmb / C
mb
D
VDS / V
/P
100
); conditions: V
B
A
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
10 ms
100 ms
100 us
1 ms
120
120
tp = 10 us
= f(T
1000
BUK454-200A,B
mb
140
140
mb
= 25 ˚C
)
160
160
GS
180
180
10 V
p
3
Fig.5. Typical output characteristics, T
0.01
Fig.6. Typical on-state resistance, T
0.1
1.5
1.0
0.5
20
15
10
10
5
0
1
0
1E-07
0
0
ID / A
Zth / (K/W)
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
D =
0.05
0.02
0.5
0.2
0.1
4.5 5
Z
0
2
2
VGS / V =
R
th j-mb
I
DS(ON)
D
4
4
1E-05
= f(V
= f(t); parameter D = t
5.5
6
= f(I
6
DS
); parameter V
8
D
6
8
20
); parameter V
VDS / V
1E-03
ID / A
t / s
10
10
P
6.5
D
BUK454-200A/B
12
12
10
Product Specification
t
p
7
14
T
14
1E-01
BUKx54-lv
BUK444-200A
GS
VGS / V =
BUK454-200A
D =
16
GS
16
p
/T
7.5
j
T
j
t
= 25 ˚C .
p
t
= 25 ˚C .
18
18
Rev 1.000
1E+01
10
7
5
8
8
6
4
20
20
20