BUK108-50GS Philips Semiconductors, BUK108-50GS Datasheet - Page 6

• Manufacturer Part Number: BUK108-50GS
• Description: PowerMOS transistor TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
TOPFET
Fig.7. Typical on-state characteristics, T
0.20
0.15
0.10
0.05
50
40
30
20
10
60
50
40
30
20
10
Fig.6. Typical output characteristics, T
ID = f(V
0
0
0
Fig.8. Typical on-state resistance, T
0
0
ID / A
ID / A
0
RDS(ON) / Ohm
R
ID = f(V
DS(ON)
4
DS
); parameter V
1
= f(I
10
DS
8
); parameter V
D
4
); parameter V
11
12
2
20
10
VDS / V
VDS / V
9
ID / A
IS
16
5
; t
8
p
VIS / V =
= 250 s & t
IS
3
30
20
VIS / V =
IS
; t
; t
p
p
= 250 s
6
= 250 s
24
7
7
j
BUK108-50GS
BUK108-50GS
40
BUK108-50GS
4
= 25 ˚C.
j
8
= 25 ˚C.
j
8
= 25 ˚C.
28
p
9
< t
9
10
6
5
4
3
d sc
10
7
6
5
4
32
50
5
6
Fig.11. Normalised drain-source on-state resistance.
12
11
10
a = R
Fig.9. Typical transfer characteristics, T
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
Fig.10. Typical transconductance, T
I
0
D
g
0
gfs / S
1.5
1.0
0.5
ID / A
fs
0
= f(V
DS(ON)
-60 -40 -20
= f(I
a
IS
D
/R
2
) ; conditions: V
); conditions: V
10
DS(ON)
25 ˚C = f(T
0
4
20
20
VIS / V
Tj / C
ID / A
40
6
DS
DS
Normalised RDS(ON) = f(Tj)
j
= 10 V; t
); I
60
= 10 V; t
30
D
BUK108-50GS
Product specification
80 100 120 140
= 7.5 A; V
8
p
p
= 250 s
= 250 s
j
BUK108-50GS
40
BUK108-50GS
= 25 ˚C.
10
j
= 25 ˚C.
IS
Rev 1.000
= 5 V
12
50