BUK108-50GS Philips Semiconductors, BUK108-50GS Datasheet - Page 4

• Manufacturer Part Number: BUK108-50GS
• Description: PowerMOS transistor TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
INPUT CHARACTERISTICS
T
TRANSFER CHARACTERISTICS
T
SWITCHING CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUE
1 The input voltage below which the overload protection circuits will be reset.
2 During overload before short circuit load protection operates.
June 1996
PowerMOS transistor
TOPFET
mb
SYMBOL PARAMETER
V
I
V
V
I
V
R
mb
SYMBOL PARAMETER
g
I
mb
SYMBOL PARAMETER
t
t
t
t
t
t
t
t
SYMBOL PARAMETER
I
IS
ISL
D(SC)
d on
r
d off
f
d on
r
d off
f
S
fs
IS(TO)
ISR
ISR
(BR)IS
IG
= 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
= 25 ˚C
= 25 ˚C. R
Input threshold voltage
Input supply current
Protection reset voltage
Protection reset voltage
Input supply current
Input clamp voltage
Input series resistance
Forward transconductance
Drain current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Continuous forward current
I
= 50
. Refer to waveform figures and test circuits.
2
1
CONDITIONS
V
V
T
V
I
to gate of power MOSFET
CONDITIONS
V
V
CONDITIONS
V
resistive load R
V
resistive load R
V
inductive load I
V
inductive load I
I
j
DS
IS
IS
DS
DS
DD
DD
DD
DD
= 10 mA
= 150 ˚C
= 10 V; normal operation
= 10 V; protection latched
0.01
= 5 V; I
= 10 V; I
= 13 V; V
= 13 V; V
= 13 V; V
= 13 V; V
= 13 V; V
CONDITIONS
T
mb
4
D
DM
25 ˚C; V
= 1 mA
IS
IS
IS
IS
IS
DM
DM
= 7.5 A t
= 10 V
= 10 V
= 0 V
= 10 V
= 0 V
L
L
= 4
= 4
= 3 A
= 3 A
IS
= 0 V
p
300 s;
MIN.
MIN.
MIN.
1.0
2.0
1.0
1.0
11
MIN.
5
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
1.5
0.4
2.6
2.5
0.5
0.5
13
40
10
15
BUK108-50GS
4
9
1
4
5
1
-
Product specification
MAX.
15
MAX.
MAX.
MAX.
2.0
1.0
3.5
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
A
mA
mA
k
V
V
V
S
A
s
s
s
s
s
s
s
s