BUK108-50GS Philips Semiconductors, BUK108-50GS Datasheet - Page 5

• Manufacturer Part Number: BUK108-50GS
• Description: PowerMOS transistor TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
REVERSE DIODE CHARACTERISTICS
T
ENVELOPE CHARACTERISTICS
1 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
PowerMOS transistor
TOPFET
mb
SYMBOL PARAMETER
V
t
SYMBOL PARAMETER
L
L
rr
d
s
I
SDS
D
= 25 ˚C
% = 100 I
Fig.2. Normalised limiting power dissipation.
Fig.3. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
PD%
ID%
P
Forward voltage
Reverse recovery time
Internal drain inductance
Internal source inductance
D
D
% = 100 P
/I
20
20
D
(25 ˚C) = f(T
40
40
D
60
60
/P
Tmb / C
Tmb / C
D
(25 ˚C) = f(T
mb
Normalised Current Derating
80
80
Normalised Power Derating
); conditions: V
100
100
120
120
mb
)
140
140
IS
CONDITIONS
I
not applicable
CONDITIONS
Measured from upper edge of tab
to centre of die
Measured from source lead
solering point to source bond pad
S
= 5 V
= 15 A; V
5
IS
= 0 V; t
1
100
0.1
10
0.01
1
0.1
10
I
1
1E-07
D
1
ID & IDM / A
p
& I
Zth / (K/W)
Fig.4. Safe operating area. T
= 300 s
Fig.5. Transient thermal impedance.
D =
0.05
0.02
DM
0.5
0.2
0.1
0
Z
= f(V
th j-mb
1E-05
Overload protection characteristics not shown
DS
DC
= f(t); parameter D = t
); I
10
DM
MIN.
MIN.
single pulse; parameter t
-
-
-
-
1E-03
VDS / V
t / s
P
D
TYP.
TYP.
1.0
2.5
7.5
BUK108-50GS
-
Product specification
t
p
100
T
100 ms
tp =
100 us
1E-01
mb
10 ms
10 us
1 ms
BUK108-50GS
MAX.
MAX.
= 25 ˚C
p
D =
/T
1.5
-
-
-
BUK108-50GS
t
T
p
t
Rev 1.000
1E+01
UNIT
UNIT
nH
nH
p
V
-