BSO303 Infineon Technologies AG, BSO303 Datasheet - Page 7

• Manufacturer Part Number: BSO303
• Description: OptiMOS -P Small-Signal-Transistor
• Manufacturer: Infineon Technologies AG

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
mJ
100
= f (T
-36
-34
-33
-32
-31
-30
-29
-28
-27
= -25 V, R
V
80
70
60
50
40
30
20
10
0
-60
25
BSO303P
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25
= -8.2 A
75
60
100
100
°C
°C
T
T
Preliminary data
j
j
180
150
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSO303P
10
Gate
D
= -8.2 A pulsed
)
20
30
0.2 V
0.5 V
0.8 V
40
DS max
DS max
DS max
50
2002-01-08
BSO303P
60 nC
|Q
Gate
75
|