BSO303 Infineon Technologies AG, BSO303 Datasheet

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BSO303

Manufacturer Part Number
BSO303
Description
OptiMOS -P Small-Signal-Transistor
Manufacturer
Infineon Technologies AG
Datasheet

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Price
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BSO303P
Manufacturer:
INFINEON
Quantity:
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BSO303P H
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BSO303SP
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OptiMOS -P Small-Signal-Transistor
Feature
Type
BSO303P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
Dual P-Channel
Enhancement mode
Logic Level
150°C operating temperature
Avalanche rated
dv/dt rated
=-8.2A, V
=-8.2 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
=-24V, di/dt=200A/µs, T
=-25V, R
Package
SO 8
GS
=25
j
= 25 °C, unless otherwise specified
jmax
Ordering Code
Q67042-S4010
=150°C
Preliminary data
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
G2
G1
S2
S1
1
2
3
4
Top View
-55... +150
55/150/56
Product Summary
V
R
I
8
7
6
5
D
Value
SIS00070
-32.4
DS
DS(on)
-8.2
-6.6
±20
97
-6
D1
D1
D2
D2
2
2002-01-08
BSO303P
-8.2
-30
21
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

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BSO303 Summary of contents

Page 1

... A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Ordering Code Q67042-S4010 Symbol puls E AS dv/dt =150°C jmax tot stg Page 1 BSO303P Product Summary V - DS(on ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air sec. Preliminary data Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO303P Values Unit min. typ. max K 110 - - 62.5 Values Unit min. typ. max. - ...

Page 3

... -10V GS V (plateau) V =-24V, I =-8. =25° = =-15V /dt=100A/µ Page 3 BSO303P Values Unit min. typ. max 1761 - pF - 495 - - 410 - - 10.6 15 12.9 19.3 - 55.4 83 -4.25 -6 -15.2 -23 - -48.3 -72 ...

Page 4

... - Page BSO303P - 100 = BSO303P single pulse - BSO303P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2002-01-08 ...

Page 5

... Typ. forward transconductance | f(I DS(on)max fs parameter µs 2 Page VGS = -3V VGS = -3. =25° BSO303P VGS = -4V VGS = -4.5V VGS = -5V VGS = -6V VGS = -8V VGS = -10V 2002-01-08 ...

Page 6

... A C iss 1 -10 C oss 0 -10 C rss -1 - Page 6 BSO303P = - 100 ) µs p BSO303P °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 2002-01-08 98% typ. 2% °C 160 ...

Page 7

... Preliminary data 14 Typ. gate charge V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -8.2 A pulsed D BSO303P -16 V - max 0 max -2 0 max BSO303P Gate 2002-01-08 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 8 BSO303P 2002-01-08 ...

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