AN1827 Freescale Semiconductor / Motorola, AN1827 Datasheet - Page 12

• Manufacturer Part Number: AN1827
• Description: Programming and Erasing FLASH Memory on the MC68HC908AS60
• Manufacturer: Freescale Semiconductor / Motorola

Application Note
12
NOTE:
If bulk erase is attempted on a FLASH array where either part or all of
the array is block protected, then none of the FLASH memory in that
array is erased.
3. Write to any FLASH address within the block address range
4. Set HVEN = 1.
5. Wait for a time, t
6. Set HVEN = 0.
7. Wait for a time, t
8. Set ERASE = 0.
9. Wait for a time, t
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desired.
The "cared" bits for the FLASH address are latched and used to
determine the address range that will be erased. The details are
discussed later in this section.
a. Internal high voltage is applied for erasing.
t
Internal high voltage is disabled.
This allows the high voltage to be discharged completely.
Disable the erase operation.
After a time, t
mode.
Erase
is the block erase time.
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HVD
Erase
Kill
HVD
, the memory can be accessed in normal read
.
.
.
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AN1827