TPC6101 Toshiba Semiconductor, TPC6101 Datasheet - Page 4

• Manufacturer Part Number: TPC6101
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

10000
3000
1000
180
160
140
120
100
300
100
2.5
1.5
0.5
80
60
40
20
30
10
-0.1
-80
0
2
1
0
0
Common source
Pulse test
-2.5 V
V GS = -2.0 V
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
-4.5 V
Ta = 25°C
f = 1 MHz
V GS = 0 V
-0.3
-40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
-1
0
R
DS (ON)
P
D
-3
40
80
– Ta
(1) Device mounted on a
(2) Device mounted on a
-1.1 A
-1.1 A
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
-1.1 A
-10
80
I D = -2.2 A
DS
DS
-2.2 A
120
°
°
-2.2 A
C)
(V)
C)
C oss
C iss
C rss
-30
120
-4.5 A
-4.5 A
-100
160
160
4
-100
-2.0
-1.6
-1.2
-0.8
-0.4
-30
-10
-20
-16
-12
-3
-1
-8
-4
-80
0
0
0
0
Common source
I D = -6 A
Ta = 25°C
Pulse test
-4 V
V DS
Dynamic input/output characteristics
2
-40
0.2
Drain-source voltage V
Ambient temperature Ta (
-2 V
4
Total gate charge Q
0.4
0
6
I
DR
V
-1 V
8
th
0.6
– V
40
– Ta
-8 V
10
DS
Common source
V DS = -10 V
I D = -200 mA
Pulse test
g
0.8
80
12
DS
V DD = -16 V
Common source
Ta = 25°C
Pulse test
V GS = -0 V
(nC)
°
(V)
14
C)
120
1
16
2002-01-17
V GS
TPC6101
160
1.2
18
-10
-8
-6
-4
-2
0