TPC6101 Toshiba Semiconductor, TPC6101 Datasheet - Page 3

• Manufacturer Part Number: TPC6101
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

-10
100
0.3
0.1
-5
-4
-3
-2
-1
-8
-6
-4
-2
30
10
-0.1
0
0
3
1
0
0
-4 V
-5 V
Common source
V DS = -10 V
Pulse test
Common source
V DS = -10 V
Pulse test
-0.3
-0.4
-0.5
Drain-source voltage V
Gate-source voltage V
-2.5 V
-3 V
100°C
Drain current I
-1
-0.8
-1
I
I
|Y
25°C
D
D
-2.0 V
fs
– V
– V
-3
| – I
GS
DS
-1.2
-1.5
D
D
Common source
Ta = 25°C Pulse test
Ta = -55°C
-1.9 V
-10
GS
DS
(A)
Ta = -55°C
V GS = -1.4 V
(V)
(V)
100°C
-1.6
-1.8 V
-1.7 V
-1.6 V
-2
25°C
-30
-100
-2.0
-2.5
3
1000
-0.8
-0.6
-0.4
-0.2
-10
300
100
-8
-6
-4
-2
-1
30
10
-0.1
0
0
0
0
-1.1 A
-0.3
-1
-2
Drain-source voltage V
Gate-source voltage V
-5 V
-2.5 V
-4 V
Drain current I
-1
-2.4 V
R
-2
V
-4
DS (ON)
-3 V
I
DS
D
-2.2 A
– V
-3
– V
-2.0 V
DS
GS
I D = -4.5 A
– I
-3
-6
-2.5 V
D
Common source
Ta = 25°C Pulse test
D
-10
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = -4.5 V
V GS = -1.4 V
(V)
(V)
-4
-8
-30
-1.8 V
-2.0 V
-2.2 V
-1.6 V
2002-01-17
TPC6101
-100
-10
-5