LMX2331A National Semiconductor, LMX2331A Datasheet - Page 6

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LMX2331A

Manufacturer Part Number
LMX2331A
Description
PLLatinum Dual Frequency Synthesizer for RF Personal Communications
Manufacturer
National Semiconductor
Datasheet

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Charge Pump Current Specification Definitions
I1 = CP sink current at V
I2 = CP sink current at V
I3 = CP sink current at V
I4 = CP source current at V
I5 = CP source current at V
I6 = CP source current at V
3. I
4. I
5. I
RF Sensitivity Test Block Diagram
Note: N = 10,000 R = 50 P = 64
Note: Sensitivity limit is reached when the error of the divided RF output, F
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
[
[|I2| − |I5|]/[
[|I2
1
Do
Do-sink
Do
2
*
@
vs V
vs T
{|I1| − |I3|}]/[
temp| − |I2
vs I
Do
A
= Charge Pump Output Current magnitude variation vs Temperature =
1
Do-source
= Charge Pump Output Current magnitude variation vs Voltage =
2
*
{|I2| + |I5|}]
1
@
2
25˚C|]/|I2
*
= Charge Pump Output Current Sink vs Source Mismatch =
{|I1| + |I3|}]
Do
Do
Do
Do
Do
Do
= V
= V
= V
*
= V
= V
= V
100%
P
P
@
/2
− V
P
P
25˚C|
/2
*
− V
100% and [
*
100% and [|I5
1
2
*
{|I4| − |I6|}]/[
@
temp| − |I5
1
2
*
{|I4| + |I6|}]
@
o
LD, is
25˚C|]/|I5
6
1 Hz.
*
@
100%
25˚C|
*
100%
CC
and ground. Typical values are between 0.5V and 1.0V.
DS012331-25
DS012331-28

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