VNQ660 STMicroelectronics, VNQ660 Datasheet - Page 9

• Manufacturer Part Number: VNQ660
• Description: QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
• Manufacturer: STMicroelectronics

ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
load dump peak voltage exceeds V
same applies if the device will be subject to transients on
the V
ISO T/R 7637/1 table.
If a ground protection network is used and negative
transient are present on the V
be pulled negative. ST suggests to insert a resistor (R
in line to prevent the C I/Os pins to latch-up.
C I/Os PROTECTION:
ld
is necessary (Voltage Transient Suppressor) if the
CC
line that are greater than the ones shown in the
CC
line, the control pins will
CC
max DC rating. The
prot
)
The value of these resistors is a compromise between the
leakage current of
HSD I/Os (Input levels compatibility) with the latch-up limit
of C I/Os.
Calculation example:
For V
5k
Recommended R
-V
CCpeak
CCpeak
R
prot
/I
latchup
= - 100V and I
65k .
prot
R
value is 10k
C and the current required by the
prot
latchup
(V
OH C
-V
20mA; V
IH
-V
GND
VNQ660SP
OH C
) / I
IHmax
4.5V
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