VNQ660 STMicroelectronics, VNQ660 Datasheet - Page 8

• Manufacturer Part Number: VNQ660
• Description: QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
• Manufacturer: STMicroelectronics

VNQ660SP
APPLICATION SCHEMATIC
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
8/16
D
GND
1) R
2) R
= (-V
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
resistor.
GND
GND
CC
+5V
GND
PROTECTION
C
)
2
/R
600mV / (I
is the DC reverse ground pin current and can
GND
V
CC
) / (-I
R
R
R
R
R
prot
prot
prot
prot
GND
prot
S(on)max
GND
)
(when V
NETWORK
+5V
).
S(on)max
CC
STATUS
INPUT4
INPUT1
INPUT3
INPUT2
<0: during reverse
GND
becomes the
AGAINST
only). This
V
GND
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
A resistor (R
D
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
input threshold and the status output values if the
microprocessor ground is not common with the device
GND
R
GND
GND
if the device will be driving an inductive load.
V
CC1,2
GND
D
GND
S(on)max
=1k
OUTPUT1
OUTPUT2
OUTPUT4
OUTPUT3
GND
should be inserted in parallel to
* R
) in the ground line.
GND
) in the input thresholds
j
600mV) in the
GND
.
GND
D
ld
will
1