SI5475DC Vishay Siliconix, SI5475DC Datasheet - Page 3

• Manufacturer Part Number: SI5475DC
• Description: P-Channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71324
S-21251—Rev. B, 05-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.5 A
0.2
On-Resistance vs. Drain Current
= 6 V
V
SD
5
5
Q
g
V
-- Source-to-Drain Voltage (V)
GS
I
0.4
D
-- Total Gate Charge (nC)
-- Drain Current (A)
= 1.8 V
Gate Charge
T
J
= 150_C
0.6
10
10
0.8
V
V
GS
GS
T
J
15
15
= 2.5 V
= 4.5 V
= 25_C
1.0
20
20
1.2
3000
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
--50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
--25
GS
rss
= 5.5 A
2
= 4.5 V
1
C
C
iss
oss
V
T
V
0
J
DS
GS
-- Junction Temperature (_C)
-- Gate-to-Source Voltage (V)
4
-- Drain-to-Source Voltage (V)
25
Capacitance
2
I
Vishay Siliconix
D
50
= 5.5 A
6
3
75
Si5475DC
8
100
www.vishay.com
4
10
125
150
12
5
3