SI5475DC Vishay Siliconix, SI5475DC Datasheet - Page 2

• Manufacturer Part Number: SI5475DC
• Description: P-Channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Notes
a.
b.
www.vishay.com
2
Si5475DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
20
15
10
5
0
0
b
Parameter
1
V
a
a
DS
V
GS
Output Characteristics
a
-- Drain-to-Source Voltage (V)
= 5 thru 2.5 V
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
1 V
3
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
1.5 V
t
SD
t
t
4
gd
rr
fs
gs
r
f
g
2 V
5
V
I
V
DS
D
DS
≅ --1 A, V
= --6 V, V
I
V
F
= --9.6 V, V
V
V
V
V
DS
V
GS
= --1.1 A, di/dt = 100 A/ms
V
GS
I
DS
V
V
V
S
DS
Test Condition
GS
DS
DD
DD
DS
= --1.1 A, V
= --4.5 V, I
--5 V, V
= --2.5 V, I
= --9.6 V, V
= --5 V, I
= --1.8 V, I
= V
= --6 V, R
= --6 V, R
= 0 V, V
GEN
GS
GS
GS
= --4.5 V, I
= --4.5 V, R
, I
= 0 V, T
D
D
GS
GS
D
D
GS
= --I mA
D
= --5.2 A
L
L
GS
= --4.8 A
= --5.5 A
= --4.5 V
= 6 Ω
= 6 Ω
= --2 A
= 8 V
= 0 V
= 0 V
D
J
20
16
12
G
8
4
0
= 85_C
= --5.5 A
0.0
= 6 Ω
0.5
V
GS
Transfer Characteristics
--0.45
Min
--20
-- Gate-to-Source Voltage (V)
1.0
T
0.027
0.035
0.045
C
Typ
--0.7
122
3.9
3.6
19
19
15
20
80
40
= --55_C
25_C
S-21251—Rev. B, 05-Aug-02
1.5
Document Number: 71324
100
Max
0.031
0.041
0.054
--1.2
180
120
29
25
30
60
--1
--5
2.0
125_C
Unit
nA
mA
mA
nC
ns
Ω
V
A
S
V
2.5