SI3586DV Vishay Siliconix, SI3586DV Datasheet - Page 2

• Manufacturer Part Number: SI3586DV
• Description: N- and P-Channel MOSFET
• Manufacturer: Vishay Siliconix

SPICE Device Model Si3586DV
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
t
t
V
Q
D(on)
Q
GS(th)
d(on)
d(off)
g
Q
t
t
SD
fs
gs
gd
r
f
g
V
DS
V
I
D
I
DS
D
= −10 V, V
≅ −1 A, V
≅ 1 A, V
= 10 V, V
V
V
V
V
V
V
V
V
I
V
V
V
DS
GS
I
S
DS
V
V
S
DD
GS
GS
GS
DS
DS
DS
GS
= −1.05 A, V
DD
DS
= 1.05 A, V
≤ −5 V, V
= −4.5 V, I
= V
= 2.5 V, I
= −5 V, I
= −10 V, R
= V
= −2.5 V, I
= −1.8 V, I
≥ 5 V, V
= 4.5 V, I
=10 V, R
= 5 V, I
N-Channel
N-Channel
GEN
GEN
P-Channel
P-Channel
Test Condition
GS
GS
GS
GS
, I
= 4.5 V, R
= −4.5 V, R
, I
= −4.5 V, I
= 4.5 V, I
D
D
GS
GS
D
D
= −250 µA
= 250 µA
D
D
L
D
GS
= 3.4 A
= −2.5 A
D
D
GS
L
= 4.5 V
= −4.5 V
= 3.4 A
= −2.5 A
= 10 Ω
= 3.2 A
= −2 A
= −1 A
= 10 Ω
= 0 V
= 0 V
D
G
D
G
= 3.4 A
= 6 Ω
= −2.5 A
= 6 Ω
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Simulated
Data
0.048
0.088
0.056
0.120
0.165
−0.78
0.70
0.78
0.80
0.65
0.68
0.90
0.90
111
6.4
4.1
47
12
29
45
52
53
27
69
27
11
4
S-50836Rev. B, 16-May-05
Measured
Document Number: 72435
Data
0.047
0.086
0.054
0.116
0.170
−0.80
0.80
0.65
0.68
0.90
0.90
4.1
13
30
28
52
55
25
55
20
32
6
5
Unit
Nc
Ns
Ω
V
A
S
V