SI3586DV Vishay Siliconix, SI3586DV Datasheet

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... Document Number: 72435 S-50836Rev. B, 16-May-05 SPICE Device Model Si3586DV • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...

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... SPICE Device Model Si3586DV Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage V a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... COMPARISON OF MODEL WITH MEASURED DATA (T N-Channel MOSFET Document Number: 72435 S-50836Rev. B, 16-May-05 SPICE Device Model Si3586DV Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...

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... SPICE Device Model Si3586DV Vishay Siliconix P-Channel MOSFET www.vishay.com 4 Document Number: 72435 S-50836Rev. B, 16-May-05 ...