SI3495DV Vishay Siliconix, SI3495DV Datasheet - Page 2

• Manufacturer Part Number: SI3495DV
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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SPICE Device Model Si3495DV
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
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SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
ba
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
V
D(on)
Q
Q
GS(th)
g
Q
SD
fs
gs
gd
g
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V
DS
= −10 V, V
V
V
V
V
V
V
Test Conditions
DS
GS
GS
I
V
DS
S
GS
GS
DS
= −1.7 A, V
= −5 V, V
= −2.5 V, I
= −1.8 V, I
= V
= −4.5 V, I
= −1.5 V, I
= −5 V, I
GS
GS
, I
= −4.5 V, I
D
GS
= −250 µA
D
D
D
GS
D
D
= −4.5 V
= −6.2 A
= −5.2 A
= −7 A
= −7 A
= −3 A
= 0 V
D
= −7 A
Simulated
Data
0.021
0.025
0.030
0.035
−0.83
0.66
144
2.5
25
22
7
Measured
S-50836Rev. B, 16-May-05
Data
0.020
0.024
0.030
0.036
−0.62
Document Number: 73150
2.5
25
25
7
Unit
nC
Ω
V
A
S
V