SI3495DV Vishay Siliconix, SI3495DV Datasheet

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SI3495DV

Manufacturer Part Number
SI3495DV
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SI3495DV.pdf (3 pages)

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DataSheet4U.com
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CHARACTERISTICS
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73150
S-50836Rev. B, 16-May-05
DESCRIPTION
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS.
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
P-Channel 20-V (D-S) MOSFET
The subcircuit
DataSheet4U.com
SPICE Device Model Si3495DV
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1

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SI3495DV Summary of contents

Page 1

... DataSheet4U.com Document Number: 73150 S-50836Rev. B, 16-May-05 SPICE Device Model Si3495DV P-Channel 20-V (D-S) MOSFET • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

... SPICE Device Model Si3495DV Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage ba On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. ...

Page 3

... COMPARISON OF MODEL WITH MEASURED DATA (T DataSheet4U.com Document Number: 73150 S-50836Rev. B, 16-May-05 SPICE Device Model Si3495DV =25°C UNLESS OTHERWISE NOTED) J DataSheet4U.com Vishay Siliconix www.vishay.com 3 ...

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