SI3477DV Vishay Siliconix, SI3477DV Datasheet - Page 9

• Manufacturer Part Number: SI3477DV
• Description: P-Channel 12 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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AN823
Vishay Siliconix
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
junction-to-foot thermal resistance, Rq
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted.
of the TSOP-6.
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r
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2
Equivalent Steady State Performance—TSOP-6
DS(on)
Thermal Resistance Rq
with temperature (Figure 4).
thermal
3_C/s (max)
Table 1 shows the thermal performance
140 − 170_C
TABLE 1.
resistance,
jf
FIGURE 3. Solder Reflow Temperature and Time Durations
jf
. This parameter is
Maximum peak temperature at 240_C is allowed.
Rq
jc
,
30_C/W
Pre-Heating Zone
60-120 s (min)
or
the
1X4_C/s (max)
255 − 260_C
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
I
D
−25
Reflow Zone
GS
60 s (max)
= 6.1 A
10 s (max)
217_C
= 4.5 V
T
FIGURE 4. Si3434DV
0
J
− Junction Temperature (_C)
25
50
3-6_C/s (max)
75
Document Number: 71743
100
125
150
27-Feb-04
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