SI3477DV Vishay Siliconix, SI3477DV Datasheet
SI3477DV
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SI3477DV Summary of contents
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... 4 0.023 2 0.033 1 Ordering Information: Si3477DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...
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... Si3477DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...
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... 1 1.5 2.0 2 Drain Current ( 9 Gate Charge Si3477DV Vishay Siliconix ° 125 ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 4000 3000 C iss 2000 C rss ...
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... Si3477DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 μA D 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.6 0.8 1.0 1 100 125 150 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70865 S10-1536-Rev. A, 19-Jul-10 New Product 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si3477DV Vishay Siliconix ...
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... Si3477DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... L 0.32 - 0.50 0.012 L 0.60 Ref 1 L 0.25 BSC 0.004 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Package Information Vishay Siliconix 0. 6-LEAD TSOP 4x 1 0.17 Ref Gauge Plane Seating Plane INCHES Nom Max - 0 ...
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... REFLOW SOLDERING Vishay Siliconix surface-mount packages meet solder reflow reliability requirements. Devices are subjected to solder reflow as a test preconditioning and are then reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow temperature profile used, and the temperatures and time duration, are shown in Figures 2 and 3 ...
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... AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal junction-to-foot thermal resistance, Rq measured for the device mounted to an infinite heat sink and is therefore a characterization of the device only, in other words, independent of the properties of the object to which the device is mounted ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...