SI3211 ETC, SI3211 Datasheet - Page 5

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SI3211

Manufacturer Part Number
SI3211
Description
PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
Manufacturer
ETC
Datasheet

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Table 3. AC Characteristics
(V
Parameter
Overload Level
Single Frequency Distortion
Signal-to-(Noise + Distortion) Ratio
Audio Tone Generator
Signal-to-Distortion Ratio
Intermodulation Distortion
Gain Accuracy
Gain Accuracy Over Frequency
Group Delay Over Frequency
Gain Tracking
Round-Trip Group Delay
Gain Step Accuracy
Gain Variation with Temperature
Gain Variation with Supply
2-Wire Return Loss
Transhybrid Balance
Idle Channel Noise
PSRR from VDDA
PSRR from VDDD
PSRR from VBAT
DDA
, V
DDD
= 3.13 to 5.25 V, T
3
2
4
2
1
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
2
V
RX and TX, DC to 3.4 kHz
RX and TX, DC to 3.4 kHz
RX and TX, DC to 3.4 kHz
Active off-hook, and OHT,
1014 Hz sine wave, refer-
DDA
0 dBm0, Active off-hook,
2-wire to PCM, 1014 Hz
PCM to 2-wire, 1014 Hz
Psophometric Weighted
C-Message Weighted
ence level –10 dBm
and OHT, any Zac
200 Hz to 3.4 kHz
200 Hz to 3.4 kHz
300 Hz to 3.4 kHz
–37 dB to –50 dB
–50 dB to –60 dB
2-wire – PCM or
= V
200 Hz–3.4 kHz
D/A or A/D 8-bit
All gain settings
Test Condition
3 dB to –37 dB
PCM – 2-wire:
–6 dB to 6 dB
TX/RX Performance
Noise Performance
THD = 1.5%
Preliminary Rev. 1.11
signal level:
at 1000 Hz
DDA
3 kHz flat
any ZAC
= 3.3/5 V ± 5%
Si3210/Si3211/Si3212
Figure 3,4
Figure 5,6
Figure 1
–0.017
–0.25
–0.25
–0.5
–0.5
–0.5
–1.0
–0.1
Min
2.5
45
30
30
40
40
40
1100
Typ
35
0
0
0.017
Max
0.25
0.25
–41
–45
–75
0.5
0.5
0.5
1.0
0.1
15
18
dBrnC
dBmP
dBrn
Unit
V
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
PK
s
5

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