SI3211 ETC, SI3211 Datasheet - Page 12

• Manufacturer Part Number: SI3211
• Description: PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
• Manufacturer: ETC

Table 7. Si321x DC Characteristics, V
(V
Si 3210/ Si3 211/S i32 12
Table 5. Monitor ADC Characteristics
(V
Table 6. Si321x DC Characteristics, V
(V
12
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Parameter
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (voltage)
Gain Error (current)
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
DDA
DDA
DDA
,V
, V
,V
DDD
DDD
DDD
= 3.13 V to 3.47 V, T
= 4.75 V to 5.25 V, T
= 3.13 to 5.25 V, T
A
Symbol
Symbol
Symbol
A
A
DNLE
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
INLE
V
V
V
V
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
V
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
V
I
V
OH
V
OL
IH
L
IL
I
OH
OL
IH
L
IL
DIO1,DIO2,SDITHRU:I
DIO1,DIO2,DOUT,SDITHRU:
DIO1,DIO2,SDITHRU:I
DIO1,DIO2,DOUT,SDITHRU:
SDO,INT,DTX:I
SDO, DTX:I
DDA
DDA
SDO,INT,DTX:I
DOUT: I
SDO, DTX:I
Test Condition
Test Condition
DOUT: I
Preliminary Rev. 1.11
Test Condition
= V
= V
I
O
I
= 4 mA
O
O
DDD
DDD
= 2 mA
O
= –40 mA
O
= –40 mA
= –8 mA
O
O
= 3.3 V
= 5.0 V
= –4 mA
= 8 mA
O
O
= 4 mA
= –4 mA
O
= –2 mA
V
V
0.7 V
DDD
DDD
V
V
0.7 V
–1/2
Min
DDD
DDD
Min
–10
–1
—
—
—
—
Min
–10
– 0.6
– 0.8
—
—
DDD
– 0.6
– 0.8
DDD
Typ
Typ
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.3 V
0.3 V
Max
Max
Max
1/2
0.4
0.4
10
10
20
—
—
—
10
—
—
—
1
DDD
DDD
Unit
LSB
LSB
Unit
Unit
%
%
V
V
V
V
V
V
V
V
V
V
A
A