FT1500AU-240 Mitsubishi Electric Semiconductor, FT1500AU-240 Datasheet - Page 4

• Manufacturer Part Number: FT1500AU-240
• Description: HIGH VOLTAGE/ HIGH POWER/ GENERAL USE DYNAMIC GATE/ PRESS PACK TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10000
3000
2500
2000
1500
1000
3000
2000
1000
8000
6000
4000
2000
HOLDING CURRENT LATCHING CURRENT VS.
500
0
0
0
–60
0
0
REVERSE RECOVERED CHARGE VS.
I
VARIABLE RESISTANCE
METHOD
I
I
d
V
V
d
TM
H
L
i
v
/d
R
D
V
/d
condition :
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
condition :
0
TURN-OFF TIME VS. JUNCTION
D
t
= 100V
= 6000V
= 2800A
t
= –10A/ s
= 3V/ s
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
= 6V
TEMPERATURE (TYPICAL)
–20
t
gw
I
d
V
TM
i
RM
/d
t
= 3000A
= –10A/ s
I
= 150V
G
50
50
(TYPICAL)
(TYPICAL)
I
20
L
t
+
0
–
I
tgw = 200 s
V
G
D
= 1050mA
60
= 12V
I
Q
+
0
–
TM
RR
100
100
Irm
d
I
=
TM
i
/d
V
t
I
q
L
trr
trr Irm
R
100
t
d
2
d
i
/d
V
I
v
H
/d
D
t
V
t
RM
t
140
150
150
t
RATE OF DECREASE OF ON-STATE CURRENT (A / s)
HIGH VOLTAGE, HIGH POWER, GENERAL USE
3000
2000
1000
RATE-OF-RISE OF OFF-STATE VOLTAGE (V/ s)
10
10
20
15
10
RATE OF RISE OF OFF-STATE VOLTAGE
5
0
3
2
7
5
3
2
7
5
3
10
4
3
0
7
OF ON-STATE CURRENT (TYPICAL)
0
I
d
V
V
T
CHARGE VS. RATE OF DECREASE
10
TM
i
j
R
D
/d
0
= 80°C
1
0
= 100V
= 6000V
t
= 2800A
V
0.1 I
= –10A/ s
2 3 4 5 7
TURN-ON TIME VS. GATE
D
DYNAMIC GATE, PRESS PACK TYPE
REVERSE RECOVERED
2
2 3
CURRENT (TYPICAL)
GM
GATE CURRENT (A)
TURN-OFF TIME VS.
I
V
T
t
TM
gt
j
RM
3
= 125°C
= 3000A
0.1V
= 150V
(TYPICAL)
4
5 7
D
10
I
+
0
–
GM
5
1
10
t
Q
+
0
–
I
6
d
V
I
d
T
TM
1
TM
RR
iG
iT
j
D
FT1500AU-240
2 3 4 5 7
Irm
= 125°C
/d
/d
= 6000V
I
=
= 3000A
7
d
TM
t
t
i
2 3
= 100A/ s
/d
V
= 1.5A/ s
t
q
trr
trr Irm
R
t
8
d
2
i
d
/d
V
v
t
/d
D
9
V
t
5 7
RM
t
10
t
10
2
Feb.1999