FT1500AU-240 Mitsubishi Electric Semiconductor, FT1500AU-240 Datasheet - Page 3

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FT1500AU-240

Manufacturer Part Number
FT1500AU-240
Description
HIGH VOLTAGE/ HIGH POWER/ GENERAL USE DYNAMIC GATE/ PRESS PACK TYPE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
10000
10000
8000
6000
4000
2000
8000
6000
4000
2000
300
200
100
MAXIMUM ON-STATE POWER DISSIPATION
MAXIMUM ON-STATE POWER DISSIPATION
0
0
0
–40
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
RESISTIVE,
INDUCTIVE
LOAD
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
(SINGLE-PHASE HALF WAVE)
360°
–20
= 30°
JUNCTION TEMPERATURE
500
(RECTANGULAR WAVE)
CHARACTERISTICS
CHARACTERISTICS
= 30°
60°
500
20
1000
(TYPICAL)
90°
120°
60°
60
1500
180°
1000
90°
100
RESISTIVE,
INDUCTIVE
LOAD
DC METHOD
270°
360°
120°
2000
140
V
R
D
L
DC
= 2
= 6V
180°
1500
2500
180
HIGH VOLTAGE, HIGH POWER, GENERAL USE
125
100
175
150
125
100
3.0
2.0
1.0
75
50
25
75
50
25
0
0
0
–60
0
0
ALLOWABLE FIN TEMPERATURE VS.
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
RESISTIVE,
INDUCTIVE
LOAD
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
(SINGLE-PHASE HALF WAVE)
360°
DYNAMIC GATE, PRESS PACK TYPE
= 30°
JUNCTION TEMPERATURE
500
–20
(RECTANGULAR WAVE)
= 30°
500
1000
60°
(TYPICAL)
20
90°
60°
120°
1500
FT1500AU-240
60
1000
90° 120°
180°
RESISTIVE,
INDUCTIVE
DC METHOD
360°
2000
100
270°
V
R
LOAD
D
L
= 2
= 6V
180°
DC
1500
2500
140
Feb.1999

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