FT1500AU-240 Mitsubishi Electric Semiconductor, FT1500AU-240 Datasheet - Page 2

• Manufacturer Part Number: FT1500AU-240
• Description: HIGH VOLTAGE/ HIGH POWER/ GENERAL USE DYNAMIC GATE/ PRESS PACK TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
I
V
d
V
V
I
R
RRM
DRM
GT
Symbol
v
TM
GT
GD
th(j-f)
/d
t
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
10
10
10
10
10
10
10
10
–1
MAXIMUM ON-STATE CHARACTERISTIC
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
2
1
0
10
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
1
Parameter
T
j
= 125°C
2 3
V
T
I
GT
GT
V
j
GATE CHARACTERISTICS
= 125°C
ON-STATE VOLTAGE (V)
FGM
= 2.5V
–40°C
GATE CURRENT (mA)
5 7 10
25°C
P
V
FG(AV)
= 20V
GD
= 0.2V
2
= 8W
2 3 5 7 10
T
T
T
T
T
T
T
Junction to fin
j
j
j
j
j
j
j
P
= 125 C, V
= 125 C, V
= 125 C, I
= 125 C, V
= 25 C, V
= 125 C, V
= 25 C, V
FGM
I
3
FGM
2 3 5 7 10
= 30W
= 6.0A
D
D
TM
RRM
DRM
D
D
= 6V, R
= 6V, R
= 1/2V
= 1/2V
= 3000A, Instantaneous measument
4
Applied
Applied
Test conditions
L
L
DRM
DRM
= 2
= 2
HIGH VOLTAGE, HIGH POWER, GENERAL USE
0.006
0.005
0.004
0.003
0.002
0.001
50
40
30
20
10
10
0
0
10
10
RATED SURGE ON-STATE CURRENT
–3
0
MAXIMUM THERMAL IMPEDANCE
0
DYNAMIC GATE, PRESS PACK TYPE
2
2
2 3
3 5 7
3 5 7
CONDUCTION TIME
(JUNCTION TO FIN)
(CYCLES AT 60Hz)
CHARACTERISTIC
10
10
5 7
–2
1
TIME (s)
2
2000
Min
0.2
10
—
—
—
—
—
—
3 5 7
1
FT1500AU-240
10
2 3
Limits
–1
Typ
—
—
—
—
—
—
—
—
2
3 5 7
5 7
0.005
Max
1200
1200
10
—
—
10
350
4.0
2.5
2
0
Feb.1999
V/ s
Unit
mA
mA
mA
C/W
V
V
V